发明名称 |
IMAGE SENSOR HAVING COMPRESSIVE LAYERS |
摘要 |
An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer. |
申请公布号 |
US2013329102(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201213492258 |
申请日期 |
2012.06.08 |
申请人 |
TSAO CHUN-HAN;LAI CHIH-YU;HUANG CHIH-HUI;WU CHENG-TA;TU YEUR-LUEN;WANG CHING-CHUN;TING SHYH-FANN;TSAI CHIA-SHIUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAO CHUN-HAN;LAI CHIH-YU;HUANG CHIH-HUI;WU CHENG-TA;TU YEUR-LUEN;WANG CHING-CHUN;TING SHYH-FANN;TSAI CHIA-SHIUNG |
分类号 |
H04N5/335 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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