发明名称 |
Semiconductor device of polycrystalline silicon resistors |
摘要 |
Provided is a method capable of forming a polycrystalline silicon resistor with preferable ratio accuracy so as to design a resistor circuit with high accuracy. In the method, a length of a low concentration impurity region constituting the polycrystalline silicon resistor in a longitudinal direction is varied in accordance with an occupying area of a metal portion overlapping the low concentration impurity region, thereby correcting a variation in resistance without varying an external shape and the occupying area of the resistor. |
申请公布号 |
US8604589(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20060494310 |
申请日期 |
2006.07.26 |
申请人 |
TSUKAMOTO AKIKO;HARADA HIROFUMI;SEIKO INSTRUMENTS INC. |
发明人 |
TSUKAMOTO AKIKO;HARADA HIROFUMI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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