LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A light emitting diode and a method for manufacturing the same are disclosed. The light emitting diode comprises a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some regions of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode. The method for manufacturing the light emitting diode comprises the steps of: forming the graphene layer on the second semiconductor layer; forming a mask film having a pattern on the graphene layer; forming a metal layer within the pattern of the mask film and then removing the mask film; and heat treating the metal layer to form a plurality of metal nanoparticles, whereby the metal nanoparticles having a high index of refraction are formed on some regions of the graphene layer and provides surface texturing effects, thereby improving light emission efficiency. [Reference numerals] (AA) Graphene layer;(BB) Ag nanoparticle