发明名称 |
Method of forming an extremely thin semiconductor insulator (ETSOI) FET having a stair-shaped raised source/drain |
摘要 |
A MOSFET device is formed on top of a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness ranging from 3 nm to 20 nm. A stair-shape raised extension, a raised source region and a raised drain region (S/D) are formed on top of the SOI substrate. The thinner raised extension region abuts at a thin gate sidewall spacer, lowering the extension resistance without significantly increasing the parasitic resistance. A single epitaxial growth forms the thinner raised extension and the thicker raised S/D preferably simultaneously, reducing the fabrication cost as well as the contact resistance between the raised S/D and the extension. A method of forming the aforementioned MOSFET device is also provided.
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申请公布号 |
US8574970(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US20100882490 |
申请日期 |
2010.09.15 |
申请人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
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