发明名称 Bit Line Bias Circuit With Varying Voltage Drop
摘要 A bit line bias circuit of a memory architecture includes a varying voltage drop. In some embodiments, the voltage drop can depend on the threshold voltage of the memory cell selected to be read, or on the sense current flowing through the memory cell selected to be read.
申请公布号 US2013286744(A1) 申请公布日期 2013.10.31
申请号 US201213458485 申请日期 2012.04.27
申请人 CHEN CHUNG-KUANG;CHEN HAN-SUNG;HUNG CHUN-HSIUNG;MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN CHUNG-KUANG;CHEN HAN-SUNG;HUNG CHUN-HSIUNG
分类号 G11C16/06;G11C16/04 主分类号 G11C16/06
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