| 摘要 |
PROBLEM TO BE SOLVED: To conveniently form a microscopic gate electrode for simultaneously achieving the reduction of a gate resistance, the avoidance of parasitic capacitance increase and the improvement of mechanical strength.SOLUTION: An isotropic REI, an anisotropic REI, and the existence/absence of etching selectivity of SiOand SiN are combined to form a step-wise insulation film opening part after alternatingly laminating SiOfilms 3, 5, 7 and SiN films 4, 6, 8, and a metal 10 for an electrode is laminated on the step-wise insulation film opening part. Thus, a microscopic gate electrode for simultaneously achieving the further shortening of gate length, the reduction of gate resistance, the avoidance of parasitic capacitance increase and the improvement of mechanical strength can be conveniently formed. |
