| 发明名称 |
Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices |
| 摘要 |
Non-polar (1120) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (1120) a-plane GaN thin films |
| 申请公布号 |
KR101317469(B1) |
申请公布日期 |
2013.10.11 |
| 申请号 |
KR20117010086 |
申请日期 |
2003.04.15 |
| 申请人 |
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发明人 |
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| 分类号 |
C23C16/04;C30B25/02;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L21/205;H01L33/00;H01S5/343 |
主分类号 |
C23C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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