MAGNETORESISTIVE ELEMENT AND METHOD FOR WRITING MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To suppress the occurrence of an erroneous writing caused by overheating by current passage and the degradation of writing speed, by reducing writing current.SOLUTION: The magnetoresistive element includes: a first magnetic layer 11; a second magnetic layer 13; a nonmagnetic layer 12 formed between the first and second magnetic layers; a first insulating layer 14 formed between the second magnetic layer and a charge storage layer; and a second insulating layer 16 formed on a face of the charge storage layer, which is different from the face on which the first insulating layer is formed.