| 摘要 |
According to example embodiments, a semiconductor memory device may include a write voltage generator configured to generate a write voltage to perform the write operation to at least one of a plurality of banks where the write voltage generator generates the write voltage to have a voltage level of a read voltage before the write operation changes to a read operation. The semiconductor device may also include a read voltage generator configured to generate a read voltage to perform the read operation to at least one of the other plurality of banks and/or a plurality of switches configured to switch a voltage applied to at least one of the banks to one of the write voltage and the read voltage in response to a plurality of control signals. |
