发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which enhances uniformity of a current in a main semiconductor region which is a light-emitting surface, and has an overvoltage protection element with improved reliability.SOLUTION: The semiconductor light-emitting device, having an overvoltage protective function, comprises: a silicon semiconductor substrate 1; a main semiconductor region for a light emitting element; a first electrode; and a second electrode. The silicon semiconductor substrate has a protection element formation region. The first electrode has a bonding pad electrode 20. An optical transparent conductive film 19 and an insulator film 17, formed in roughly a rectangular or roughly a square shape, are disposed on the main semiconductor region. A hole 17b is formed in the insulator film, and a bonding pad electrode part and the optical transparent conductive film are connected with a band shape connection conductive layer 22, formed so as to include the hole. The hole is so formed as to include at least a center of the bonding pad electrode and a central part of an outer peripheral edge corner of the optical transparent conductive film on a diagonal line of the optical transparent conductive film.
申请公布号 JP2013135052(A) 申请公布日期 2013.07.08
申请号 JP20110283633 申请日期 2011.12.26
申请人 SANKEN ELECTRIC CO LTD 发明人 MATSUO TETSUJI
分类号 H01L33/02;H01L33/38 主分类号 H01L33/02
代理机构 代理人
主权项
地址