| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has uniform characteristics, a high yield, and low contact resistance at a source electrode and a drain electrode.SOLUTION: The semiconductor device includes semiconductor layers (21, 22, 23) formed on a substrate (10), an insulating film (40) formed on the semiconductor layers, and an electrode (41) which has a portion embedded in the insulating film and is in contact with the semiconductor layers. The embedded portion of the electrode comprises a second conductive film (52) being in contact with the semiconductor layers and a first conductive film (51) formed between the second conductive film and the insulating film. The first conductive film is constituted of a material containing a nitride or tungsten. The second conductive film contains a metal material. |
