发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor with excellent electric characteristics. <P>SOLUTION: A semiconductor device comprises: an oxide semiconductor layer; a first region having conductivity on the oxide semiconductor layer; a source electrode on the first region; a second region having conductivity on the oxide semiconductor layer; a drain electrode on the second region; and a gate electrode on the oxide semiconductor layer. The gate electrode has a region overlapping with the first region, and has a region overlapping with the second region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013118401(A) |
申请公布日期 |
2013.06.13 |
申请号 |
JP20130033154 |
申请日期 |
2013.02.22 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ARAI YASUYUKI;HONDA TATSUYA;AKIMOTO KENGO;KAWAMATA IKUKO |
分类号 |
H01L21/336;G02F1/1368;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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