| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric device and a manufacturing method of the same, which reliably improve piezoelectric characteristics by reliably depositing a piezoelectric thin film on a single crystal substrate by epitaxial growth in a favorable single crystal state. <P>SOLUTION: A manufacturing method of a piezoelectric device 10 comprises the steps of: depositing an inhibition film 2 for inhibiting growth of a piezoelectric thin film 3 in a single crystal, when assuming that a single crystal substrate 1 is divided into an oscillation part 1A which oscillates and a non-oscillation part 1B which is connected to the oscillation part 1A and does not oscillate, on the single crystal substrate 1 in a region including the non-oscillation part 1B and in a region on the oscillation part 1A except a deposition region of the piezoelectric thin film 3; subsequently, depositing the piezoelectric thin film 3 in a single crystal by epitaxial growth on a part of the oscillation part 1A which is to be the deposition region and depositing the piezoelectric thin film 3 in an amorphous substance or in a polycrystal on the inhibition film 2; subsequently, removing the piezoelectric thin film 3 deposited on the inhibition film 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
