发明名称 |
VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE |
摘要 |
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
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申请公布号 |
US2013122328(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213719110 |
申请日期 |
2012.12.18 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE;PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
GORDON ROY GERALD;BECKER JILL S.;HAUSMANN DENNIS;SUH SEIGI |
分类号 |
C01B13/34;C23C16/42;C07F9/09;C07F9/11;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316 |
主分类号 |
C01B13/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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