| 摘要 |
<p>A trench-type insulated gate bipolar transistor and a method for fabricating the same are provided. The trench-type insulated gate bipolar transistor comprises a collector layer (220), a drift layer (240), a base layer (250), an emitter layer (260), a groove (290), and a gate dielectric layer (291) and a gate electrode (292) formed in the groove (290). An upper surface of the gate electrode (292) in the groove (290) is etched back below an upper surface of the base layer (250), so that the emitter layer (260) is formed operable by inclined ion implantation. The method comprise a back etching step of the gate electrode (292) and a step to form the emitter layer (260) by use of the gate electrode (292) as a mask and inclined ion implantation. The trench-type insulated gate bipolar transistor fabricated by the method has a small on-resistance and can reduce the chip area.</p> |
