| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon wafer cleaning method which, even when metal impurities such as nickel are diffused inward at the time of manufacturing a silicon wafer, can reduce the metal impurities such as nickel contained not only on a surface of the silicon wafer but also in the inside of the wafer without a large increase in cost, and a silicon wafer manufacturing method using the method. <P>SOLUTION: A silicon wafer cleaning method includes the steps of: performing a heat treatment for heating a silicon wafer obtained by slicing a silicon single crystal ingot grown by a CZ method in an inert gas atmosphere to a maximum reaching temperature of 100°C or more and 800°C or less by lamp heating for irradiating with light having an emission wavelength controlled to 1000 nm or more to maintain the maximum reaching temperature for 1 sec or more and 60 sec or less, to thereby segregate metal impurities on a surface of the silicon wafer; and removing the segregated metal impurities. <P>COPYRIGHT: (C)2013,JPO&INPIT |
