Enhancing Transistor Performance by Reducing Exposure to Oxygen Plasma in a Dual Stress Liner Approach

摘要

When forming strain-inducing dielectric material layers above transistors of different conductivity type, the patterning of at least one strain-inducing dielectric material may be accomplished on the basis of a process sequence in which a negative influence of a fluorine species in an oxygen plasma upon removing the resist mask is avoided or at least significantly suppressed. For example, a substantially oxygen-free plasma process may be applied for removing the resist material.