| 摘要 |
PURPOSE: A producing method of high purity silicon carbide or silicon nitride is provided to produce mono-dispersed organic-silica minute particles by a simple process in high purity. CONSTITUTION: A producing method of high purity silicon carbide or silicon nitride comprises the following steps: assorting and distilling organic-silica precursors containing carbon using a thin-film evaporator; producing mono-dispersed organic-silica minute particles through a sol-gel method using the organic-silica precursors as raw materials; and heat processing the organic-silica minute particles at 1,300-2,000 deg. C. The heat processing of the organic-silica minute particles are conducted at 1,300- 1,600 deg. C for 1-10 hours in the nitrogen atmosphere, or at 1,500-2,000 deg. C for 1-10 hours in the nitrogen or argon atmosphere. |
