| 摘要 |
This dry etching method is characterized by using, as an etching gas, a gas which contains F2 and at least one kind of gas that is selected from among ClF3, BrF5, BrF3, IF7 and IF5 when a silicon layer, which appears on the inner surface of a hole or a groove that is formed in a substrate surface in the vertical direction, is etched using the etching gas in a multilayer film that has a layered structure wherein the silicon layer and an insulating layer are laminated, said multilayer film being formed on the substrate. Consequently, unevenness of the dry etching depth of the silicon layer can be suppressed. |
