发明名称 |
Semiconductor devices having stressor regions and related fabrication methods |
摘要 |
Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a <100> crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.
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申请公布号 |
US8394691(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20100814346 |
申请日期 |
2010.06.11 |
申请人 |
YANG BIN;NG MAN FAI;GLOBALFOUNDRIES, INC. |
发明人 |
YANG BIN;NG MAN FAI |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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