发明名称 NANOGRID CHANNEL FIN-FET TRANSISTOR AND BIOSENSOR
摘要 <p>A transistor (100) includes a source region (130), a drain region (140), and a nanogrid channel (150) connecting the source and drain regions. The nanogrid channel includes first and second vertical channel regions (160) connecting the source and drain regions. The first and second vertical channel regions have a space (180) therebetween. A cross member (170) extends from the first vertical channel region to the second vertical channel region.</p>
申请公布号 WO2013032914(A1) 申请公布日期 2013.03.07
申请号 WO2012US52294 申请日期 2012.08.24
申请人 DIAGTRONIX, INC.;WU, QIANG 发明人 WU, QIANG
分类号 H01L29/06;B82Y10/00;B82Y15/00;B82Y40/00;G01N27/414;H01L29/78 主分类号 H01L29/06
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