发明名称 |
NANOGRID CHANNEL FIN-FET TRANSISTOR AND BIOSENSOR |
摘要 |
<p>A transistor (100) includes a source region (130), a drain region (140), and a nanogrid channel (150) connecting the source and drain regions. The nanogrid channel includes first and second vertical channel regions (160) connecting the source and drain regions. The first and second vertical channel regions have a space (180) therebetween. A cross member (170) extends from the first vertical channel region to the second vertical channel region.</p> |
申请公布号 |
WO2013032914(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
WO2012US52294 |
申请日期 |
2012.08.24 |
申请人 |
DIAGTRONIX, INC.;WU, QIANG |
发明人 |
WU, QIANG |
分类号 |
H01L29/06;B82Y10/00;B82Y15/00;B82Y40/00;G01N27/414;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|