| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image pickup device which achieves random noise reduction; and provide an electronic apparatus which achieves improvement in image quality by being equipped with the solid state image pickup device. <P>SOLUTION: An amplifier transistor Tr comprises: a drain region 38 formed on a drain side and composed only of a high concentration impurity region 28; and a source region 32 formed on a source side on an amplifier gate electrode 22 side and composed of a low concentration impurity region 29 having an impurity concentration lower than that of the high concentration impurity region 28 composing the drain region 38. Because a low concentration impurity region is not formed in the drain region 38, an effective gate length Leff can be lengthened. Further, because a low concentration impurity region 29 is formed on the source side of the amplifier gate electrode 22 on the amplifier gate electrode 22 side, potential fluctuation on a substrate surface can be inhibited. <P>COPYRIGHT: (C)2013,JPO&INPIT |
