| 摘要 |
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device includes a light emitting structure, an insulating substrate, a first electrode, a second electrode, and a conductive supporting substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The insulating substrate is formed on the light emitting structure to include a contact groove. The first electrode is formed on the insulating substrate. The second electrode is formed under the light emitting structure. The conductive supporting substrate is formed under the second electrode.
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