| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which characteristic degradation of an MTJ element is prevented without the MTJ element being affected by a seam or a void in a contact plug even when miniaturized. <P>SOLUTION: A semiconductor memory device includes a semiconductor substrate. A plurality of cell transistors are provided on the semiconductor substrate. Contact plugs are embedded between the adjacent cell transistors and are electrically connected to diffusion layers between the adjacent cell transistors. An interlayer insulating film is filled between the plurality of contact plugs. Memory elements are not provided above the contact plugs and are provided above the interlayer insulating film. A side-wall film covers at least parts of side surfaces of the memory elements and is provided so as to overlap the contact plugs as viewed from above a surface of the semiconductor substrate. A lower electrode is provided between bottom surfaces of the memory elements and the interlayer insulating film and between the side-wall film and the contact plugs, and electrically connects the memory elements and the contact plugs. <P>COPYRIGHT: (C)2013,JPO&INPIT |
