| 摘要 |
<p>The objective of the invention is to provide a novel method for driving a semiconductor storage device. This semiconductor storage device includes first to fourth memory cells, wherein the first to fourth memory cells are equipped with a first gate electrode, a ferroelectric film, a semiconductor film, a source electrode, a drain electrode, a paraelectric film, and a second gate electrode. The ferroelectric film is sandwiched between the first gate electrode and the semiconductor film, the source electrode and the drain electrode are sandwiched between the semiconductor film and the paraelectric film, and the paraelectric film is sandwiched between the second gate electrode and the semiconductor film. By way of the first gate electrode, the ferroelectric film, the source electrode, and the drain electrode, a first semiconductor transistor is formed. By way of the second gate electrode, the paraelectric film, the source electrode, and the drain electrode, a second semiconductor transistor is formed. By way of adjusting a plurality of drive signals at a predetermined timing, retention of data to the first and second transistors and readout of data from the first and second transistors are performed.</p> |
