| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with improved moisture resistance, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device has a pad electrode 4 which is connected to a semiconductor integrated circuit 1 in a semiconductor chip 2a and formed nearby a flank portion on the semiconductor chip 2a, an insulating film 9 formed at the flank portion and a reverse surface portion of the semiconductor chip 2 a, a wiring layer 10 which extends from the flank portion to the reverse surface portion of the semiconductor chip 2a to be connected to a reverse surface of the pad electrode 4 and to come into contact with the insulating film 9, a protection layer 13 formed to bury the flank portion and reverse surface portion of the semiconductor chip 2a, and a conductive terminal 14 electrically connected to the wiring layer 10 through an opening portion formed in the protection layer 13. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
