发明名称 |
Post deposition method for regrowth of crystalline phase change material |
摘要 |
Techniques for forming a phase change memory cell. An example apparatus includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer, including phase change material, is disposed over the bottom electrode. A thermal insulating layer is disposed above the phase change layer. A heater is configured to temporarily melt the phase change material such that the phase change material crystallizes without voids within a switching region after melting.
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申请公布号 |
US8354659(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US201113150705 |
申请日期 |
2011.06.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;LAM CHUNG H.;ROSSNAGEL STEPHEN M.;SCHROTT ALEJANDRO G. |
发明人 |
LAM CHUNG H.;ROSSNAGEL STEPHEN M.;SCHROTT ALEJANDRO G. |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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