发明名称 |
Semiconductor memory devices and methods of forming the same |
摘要 |
Semiconductor memory devices and methods of forming the same are provided, the semiconductor memory devices include a first and a second buried gate respectively disposed on both inner sidewalls of a groove formed in an active portion and a device isolation pattern. The first and second buried gates are controlled independently from each other. |
申请公布号 |
US8324673(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100916998 |
申请日期 |
2010.11.01 |
申请人 |
CHUNG HYUN-WOO;KIM KANG-UK;OH YONGCHUL;KIM HUI-JUNG;KIM HYUN-GI;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG HYUN-WOO;KIM KANG-UK;OH YONGCHUL;KIM HUI-JUNG;KIM HYUN-GI |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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