TRANSFER METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

After depressed portions (4) have been formed in advance in that surface of a Si substrate (1) on which Si single films (8) are to be formed, that surface of the Si substrate (1) on which the Si single films are to be formed and an intermediate substrate (5) are bonded together, and elements are separated from each other by grinding the Si substrate (1) from the bottom wall side of the depressed portions (4).