| 摘要 |
PURPOSE: A semiconductor film structure and a method for forming the same are provided to increase internal quantum efficiency by forming a nitride semiconductor thin film of low defect density. CONSTITUTION: A plurality of empty spaces(C) are separately formed on a substrate(10). An inorganic film(30) is formed on the substrate. An inorganic film has 2D arrangement. A nitride semiconductor thin film is formed on the substrate. A structure of the nitride semiconductor thin film is two or more layers.
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