| 发明名称 |
SURFACE TREATMENT METHOD FOR ATOMICALLY FLATTENING A SILICON WAFER AND HEAT TREATMENT APPARATUS |
| 摘要 |
In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
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| 申请公布号 |
US2012292743(A1) |
申请公布日期 |
2012.11.22 |
| 申请号 |
US201213565868 |
申请日期 |
2012.08.03 |
| 申请人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;SUWA TOMOYUKI |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;SUWA TOMOYUKI |
| 分类号 |
F27B9/00;F26B7/00;H01L29/06 |
主分类号 |
F27B9/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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