| 摘要 |
<p>Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule (4000), carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace (1000). A support cylinder provides structural support for the combined sealed ampoule (4000) crucible (3000) assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core (2030) in the insulation material (2060) directly beneath the seed well (4030) provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.</p> |
