| 摘要 |
In one embodiment, method of controlling a semiconductor nonvolatile memory device includes determining data written to an adjacent memory cell which is adjacent to a selection memory cell in memory cells configured as a matrix, the selection memory being selected by a program operation for writing the data to the selection memory, and writing the data to the selection memory with controlling an amount of charges injected into the selection memory based on a result of determining the data.
|
