| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection method for inspecting a micro phase defect in an EUV mask blank simply with high sensitivity. <P>SOLUTION: In an EUV exposure apparatus having a reflective optical system, an EUV mask blank having a chip pattern and a substrate, on which a lower layer film, an intermediate layer film and a negative resist film are formed, are installed. After transferring a chip pattern to the negative resist film by EUV light exposure, the chip pattern is transferred by etching the intermediate layer film by using the negative resist film as a mask, and then the chip pattern is transferred by etching the lower layer film by using the intermediate layer film as a mask. Defect of the EUV mask blank is detected by comparing the chip patterns transferred to regions of the lower layer film at more than one place. <P>COPYRIGHT: (C)2012,JPO&INPIT |
