NON-VOLATILE MEMORY ARRAY ARCHITECTURE INCORPORATING 1T-1R NEAR 4F2 DENSITY MEMORY CELL,申请号EP20100779595-传众专利搜索

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发明名称	NON-VOLATILE MEMORY ARRAY ARCHITECTURE INCORPORATING 1T-1R NEAR 4F2 DENSITY MEMORY CELL
摘要
申请公布号	EP2494555(A1)	申请公布日期	2012.09.05
申请号	EP20100779595	申请日期	2010.10.22
申请人	SANDISK 3D LLC	发明人	FASOLI, LUCA, G.
分类号	G11C16/02;H01L27/24;H01L45/00	主分类号	G11C16/02
代理机构		代理人
主权项
地址

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