NON-VOLATILE STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

A non-volatile storage element manufacturing method comprises: a step of forming a first lower part electrode layer (108), an electric current control layer (109), and a first upper part electrode layer (110), and, upon the first upper part electrode layer (110), forming a second lower part electrode layer (311), a resistance changing layer (112), and a second upper part electrode layer (313); a step of patterning the second upper part electrode layer (313), the resistance changing layer (112), and the second lower part electrode layer (311); and a step of using slow-speed etching which etches at least the second lower part electrode layer (311) more slowly than the second upper part electrode layer (313) and the resistance changing layer (112), to pattern the first upper part electrode layer (110), the electric current control layer (109), and the first lower part electrode layer (108), with the second lower part electrode layer (311) as a mask, so as to form an electric current control element (142), and form a resistance changing resistance element having a smaller surface area than the surface area of the electric current control element (142).