METHOD OF PRODUCING SILICON SUBSTRATE, SILICON SUBSTRATE, SILICON SUBSTRATE FOR SOLAR CELL, METHOD OF MANUFACTURING SOLAR CELL ELEMENT, SOLAR CELL ELEMENT AND SOLAR CELL

摘要

PROBLEM TO BE SOLVED: To produce a silicon substrate having regions of different dopant concentration simply and efficiently.

SOLUTION: The method of producing a silicon substrate having a p-type diffusion layer includes: a coating step for coating the surface of a silicon substrate with a diffusion agent containing a boron nitride and a dispersion medium by at least one of following methods (1)-(3) so that the diffusion quantity of boron atoms per unit area increases in a selected area; and a thermal diffusion processing step for heating the silicon substrate following to the coating step. (1) At least two kinds of diffusion agent having different boron nitride concentration are used as the diffusion agent, and the selected area is coated with the diffusion agent having a higher boron nitride concentration. (2) In the selected area, coating with the diffusion agent is repeated and recoating is performed. (3) The selected area is coated with the diffusion agent containing a boron nitride having high diffusion ability.

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