发明名称 LIGHT-TRAPPING LAYER FOR THIN-FILM SILICON SOLAR CELLS
摘要 <P>PROBLEM TO BE SOLVED: To provide a light trapping layer for enhancing efficiency of a thin film solar cell. <P>SOLUTION: A light trapping layer has a plurality of substantially flat areas between a plurality of periodically repeating non-pointed depressions with rounded edges. The plurality of substantially flat areas facilitate deposition and growth of a layer of transparent conductive oxide over the light trapping layer. The plurality of periodically repeating non-pointed depressions with rounded edges limit formation of at least one of cracks, voids, and low density areas in semiconductor layers of the thin film solar cell. A period of the non-pointed depressions ranges between 100 nanometers and 1500 nanometers, and a depth of the non-pointed depressions ranges between 50 nanometers and 1200 nanometers. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012156500(A) 申请公布日期 2012.08.16
申请号 JP20120002710 申请日期 2012.01.11
申请人 MOSER BAER INDIA LTD 发明人 MARK STELTENPOOL;ROB VAN ERVEN
分类号 H01L31/04 主分类号 H01L31/04
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