发明名称 |
Field effect transistor having a channel comprising an oxide semiconductor material including indium and zinc |
摘要 |
Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In + Zn) is not less than 35 atomic% and not more than 55 atomic%. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In + Zn + Ga) is set to be 30 atomic% or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility. |
申请公布号 |
EP2149910(A3) |
申请公布日期 |
2012.07.25 |
申请号 |
EP20080018836 |
申请日期 |
2006.09.05 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
IWASAKI, TATSUYA;DEN, TORU;ITAGAKI, NAHO |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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