发明名称 Process of Metal-Based Package with Via
摘要 PURPOSE: A metal-base package manufacturing method including a via structure is provided to form the via of a various size including an aspect ratio by forming the via using a metal oxidation film including a vertical etching property. CONSTITUTION: A metal substrate is prepared(S10). A mask pattern for preventing oxidation is formed on the metal substrate(S20). A metal oxidation film is formed with oxidizing a part of the metal substrate exposed between mask patterns for preventing oxidation to the predetermined depth(S30). The mask pattern for the preventing oxidation is removed(S40). A mask pattern for forming via is formed on the metal substrate and the metal oxidation film(S50). The via is formed on the metal oxidation film with implementing a chemical etching about the metal oxidation film which the mast pattern for forming via is not formed(S60). The mask pattern for forming via is removed(S65). A conductive layer is formed on the inner surface of the via into a conductive material(S70).
申请公布号 KR101161756(B1) 申请公布日期 2012.07.11
申请号 KR20090057031 申请日期 2009.06.25
申请人 发明人
分类号 H01L23/50;H01L23/02;H01L23/48;H01L25/00 主分类号 H01L23/50
代理机构 代理人
主权项
地址