| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element manufacturing method having high bondability and high efficiency. <P>SOLUTION: According to the present embodiments, a transmissive first conductive layer having a thickness of not less than 100 nm and not more than 250 nm is formed on a second semiconductor layer and a highly-reflective conductive film is formed on a part of the first conductive layer and a first semiconductor layer. A third conductive layer having an extension part extending along a first principal surface of the first conductive layer on the side opposite to the second semiconductor layer and containing at least one of aluminum, argentine and rhodium is formed by processing the highly-reflective conductive film. A second conductive layer having an adhesive strength to the first conductive layer larger than an adhesive strength of the third conductive layer to the first conductive layer and a width along a direction parallel with the first principal surface of not less than 30 μm and not more than 80 μm is formed on a part of the first conductive layer so as to expose at least a part of the extension part of the third conductive layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
