| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the height of a metal contact by forming a bit line of a peri area into a first bit line and a second bit line in order to have a multilayer structure. CONSTITUTION: A storage node contact plug(12) is formed in a cell area of a substrate(11) having the cell area and a peri area. A first interlayer insulating film(17) is formed on the substrate. A first bit line(20) is formed on the first interlayer insulating film of the peri area. A second interlayer insulating film(22) is formed on the first interlayer insulating film. A second bit line(25) connected to the first bit line is formed on the second interlayer insulating film of the peri area. The storage node contact plug of the cell area is opened by using a cell open mask. A capacitor which contacts to the storage node contact plug is formed in the cell area. A third interlayer insulating film is formed on the front side of the substrate. A metal contact is formed by passing through the third interlayer insulating film. A metal wiring is formed on the third interlayer insulating film. |
