| 摘要 |
<p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof, and a liquid crystal display device using the same are provided to make an active layer thin, thereby shortening deposition process time and enhancing features of elements. CONSTITUTION: A gate insulating film(250) is formed on a frontal side of a substrate which has a gate electrode. An active layer(310) is formed on the gate insulating film. An ohmic contact layer(320) is formed on the active layer. A protective film(400) has a first contact hole and a second contact hole. A first area of the ohmic contact layer is exposed to the outside through the first contact hole. A second area of the ohmic contact layer is exposed to the outside through the second contact hole. A source electrode(510) is connected to the first area of the ohmic contact layer through the first contact hole.</p> |
