VICINAL SEMIPOLAR III-NITRIDE SUBSTRATES TO COMPENSATE TILT OF RELAXED HETERO-EPITAXIAL LAYERS

摘要

A method for fabricating a semi-polar Ill-nitride substrate for semi-polar III- nitride device layers, comprising providing a vicinal surface of the Ill-nitride substrate, so that growth of relaxed heteroepitaxial Ill-nitride device layers on the vicinal surface compensates for epilayer tilt of the Ill-nitride device layers caused by one or more misfit dislocations at one or more heterointerfaces between the device layers.