发明名称 |
Method of reducing photoresist defects during fabrication of a semiconductor device |
摘要 |
Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing. |
申请公布号 |
US8163468(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20080045373 |
申请日期 |
2008.03.10 |
申请人 |
HISHIRO YOSHIKI;GOU LIJING;SILLS SCOTT E.;MORI HIROYUKI;SHIRLEY PAUL D.;GUGEL TROY V.;OLSON ADAM L.;MICRON TECHNOLOGY, INC. |
发明人 |
HISHIRO YOSHIKI;GOU LIJING;SILLS SCOTT E.;MORI HIROYUKI;SHIRLEY PAUL D.;GUGEL TROY V.;OLSON ADAM L. |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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