发明名称 SUBSTRATE PROCESSING DEVICE, GAS NOZZLE, AND SUBSTRATE PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To improve gas heating efficiency by a nozzle, without increasing the size of a reaction container. <P>SOLUTION: A gas supply nozzle 300 comprises a first extending portion 321, a third extending portion 323, and a fifth extending portion 325 which extend in a circumferential direction of a wafer 200; and a first extending portion 321, a second extending portion 322, a forth extending portion 324, and a sixth extending portion 326 which extend in a loading direction of the wafer 200. Without increasing the size of a treatment furnace like a conventional one, the gas supply nozzle 300 can be disposed between an outer tube and an inner tube while saving a space. A path in which gas of the gas supply nozzle 300 circulates is made to be long, and the gas in the gas supply nozzle 300 can be sufficiently heated by the radiant heat of each susceptor 218. Therefore, gas heating efficiency is improved, and the generation of a slip or a haze on each wafer 200 can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069723(A) 申请公布日期 2012.04.05
申请号 JP20100213137 申请日期 2010.09.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HIRANO MAKOTO
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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