| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to rapidly write data by easily securing a margin between critical value distributions. CONSTITUTION: A memory cell array(10) is connected to a plurality of word lines laminated on a semiconductor substrate. A memory cell which includes a charge storing layer is connected to the memory cell array. The memory cell array has a cell structure in which the charge storing layer is continuously laminated between adjacent memory cells. A control circuit(15) controls a power source in order to simultaneously supply the same write voltage to a memory cell group which is connected to (n-1)th and (n+1)th word lines when data is inputted to the memory cell group connected to the n-th world line of the memory cell array. The n is an integer.
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