Purification of polysilicon fragments comprises a wet-chemical treatment of the polysilicon fragments in an aqueous mixture of hydrogen fluoride and hydrogen chloride and a subsequent thermal treatment of the polysilicon fragments

摘要

Purification of polysilicon fragments, comprises a wet-chemical treatment of the polysilicon fragments in an aqueous mixture of hydrogen fluoride and hydrogen chloride and a subsequent thermal treatment of the polysilicon fragments at a temperature of at least 600[deg] C and at most 1000[deg] C.