发明名称 SUBSTRATE PROCESSING DEVICE AND METHOD FOR MANUFACTURING SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing device capable of preventing adherence of a product material made by thermal decomposition or gas reaction to the periphery of a processing chamber. <P>SOLUTION: A substrate processing device 202 includes: a plurality of susceptors (members subjected to induction heating) 218; a plurality of wafers 200 placed on the susceptors; a processing chamber 201 formed of an inner tube 230 that performs heat treatment on the wafers 200 by radiation heat from the susceptors 218; an outer tube 205 provided outside the inner tube 230 that surrounds the inner tube 230 with a space SP; a gas supply nozzle 2321 provided in the space SP; and an induction heating unit provided outside the outer tube 205 that performs induction heating on the susceptors 218. On the inner tuber 230, an opening FH is provided on a peripheral side of the wafers 200 placed in the processing chamber 201. In addition, an outlet that flows gas toward the opening FH and the wafers 200 is provided on the gas supply nozzle 2321. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012023073(A) 申请公布日期 2012.02.02
申请号 JP20100157558 申请日期 2010.07.12
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HIRANO MAKOTO
分类号 H01L21/205;C23C16/44;H01L21/31 主分类号 H01L21/205
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