发明名称 METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS
摘要 A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated.
申请公布号 US2012015525(A1) 申请公布日期 2012.01.19
申请号 US201113183582 申请日期 2011.07.15
申请人 ENDO ATSUSHI;KUBO KAZUMI;MIZUNAGA SATOSHI;TOKYO ELECTRON LIMITED 发明人 ENDO ATSUSHI;KUBO KAZUMI;MIZUNAGA SATOSHI
分类号 H01L21/31;B08B5/00;C23C16/52 主分类号 H01L21/31
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